本文报导了通过在有源层的两边引入InGaAsP(λ=1.1μm)包层,使InGaAsP(λ=1.3μm)新月型激光器的性能得到显著改进的有关情况。以很好的重复性和很高的成品率生长的这些激光器,阈值电流为20～35mA,,在输出线性良好的情况下脉冲功率输出达到50mW,外量子效率为50～60％。这些器件能一直工作到90℃,输出功率为4mw。短电流脉冲激励表明:这些激光器适于Gbit/s工作。 This article reports the significant improvement in the performance of InGaAsP (λ = 1.3 μm) crescent-type lasers by introducing InGaAsP (λ = 1.1 μm) cladding on either side of the active layer. These lasers, which are grown with good repeatability and high yield, have a threshold current of 20-35mA and pulse power output of 50mW with good output linearity and an external quantum efficiency of 50-60%. These devices can work until 90 ℃, the output power of 4mw. Short current pulse excitation shows that these lasers are suitable for Gbit / s operation.