10W QCW operation of a proton implanted GaAlAs diode laser array

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：champhorse

【摘要】

：

We report one thick layerof hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask,a 10 W QCW(quasi-c

【作者】

：

ZHANGDaoyin HUSiqiang

【机构】

：

ChongqingOptoelectronicsResearchInstitute,ChongqingOptoelectronicsResearchInstitu

【出处】

：

半导体光子学与技术：英文版

【发表日期】

：

1995年1期

【关键词】

：

激光二极管半导体激光器量子阱离子注入光刻 Laser Diodes Semiconductor Laser Array Photoresists Mas

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We report one thick layerof hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask,a 10 W QCW(quasi-continuous wave)operation of a narrow proton implanted multi-ple stripe conventional single quan

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10W QCW operation of a proton implanted GaAlAs diode laser array

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