用电化学 C- V和 I- V特性分析的方法 ,对 Mg掺杂在 MOCVD生长 Al Ga In P发光二极管 (L ED)的影响进行了研究。通过电化学 C- V分析 ,确定了在生长结构中 Mg掺杂从有源层到 Ga P窗口层由高到低的情况 ;用 I- V特性分析的方法对器件结构进行了分析 ,发现了异常的实验结果。同时理论计算得到了同型结 (N+ - N,P+ - P)的势垒高度和空间电荷区的宽度 ,由此得到了在同型结两侧浓度比不同时的差异 ,极好的解释了异常的 I- V测试结果。 The effects of Mg doping on the growth of AlGaIn P light-emitting diodes (L EDs) by MOCVD were studied by the electrochemical C-V and I-V characterization methods. Through the electrochemical C-V analysis, it was confirmed that the Mg doping from the active layer to the Ga P window layer in the grown structure was from high to low; the structure of the device was analyzed by I-V characteristic analysis and found that Abnormal experimental results. At the same time, the barrier height of the homomorphic junction (N + - N, P + - P) and the width of the space charge region are obtained theoretically, and the differences in the concentration ratios at both sides of the homomorphic junction are obtained. I-V test results.