已经证明,用气相施主分子,可以快速（3O00A/分）的进行光化学淀积二氧化硅。利用ArF激光器（193nm）来激励并离介硅烷（SiH_4）和笑气（M_2O）分子进行淀积,与早期的用汞灯不相干光进行辐照淀积氧化物相比,其淀积速度快,可达到汞灯的20倍的淀积速率,在特定范围内,受离介反应的限制。并受紫外光（UV）对衬底直接碰撞的影响。 It has been demonstrated that by gas phase donor molecules, photochemical deposition of silica can be performed rapidly (3O00A / min). The use of an ArF laser (193 nm) to excite and deposit SiH_4 and M_2O molecules provides faster deposition than the earlier exposure of incandescent light to irradiated oxide with a mercury lamp , 20 times the deposition rate of the mercury lamp can be achieved, within a certain range, subject to the limitations of the ionization reaction. And is affected by the direct impact of ultraviolet (UV) on the substrate.