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以氢气和氧气的燃烧为基础,研究了焰熔法生长单晶体过程中生长室内的燃烧特性。结果表明:在O2和H2的流量分别为6 L/min和20 L/min条件下炉膛中心最高温度为3504.3 K,根据这个结果可确定晶体生长的位置或确定在已知位置晶体生长所需要的最佳流量;随着H2流量的增大,生长室内中心和径向的温度都逐渐提高,而最高温度的位置随着O2流量的增大而逐渐向下移动,中心O2流量每增大1 L/min,最高温度的位置向下移动5 mm,在距喷嘴110 mm处的温度平均升高230℃左右;H2分布圆直径对生长室内中心与径向的温度分布、O2的冲击深度和开始燃烧位置的影响很小。
Based on the combustion of hydrogen and oxygen, the combustion characteristics in the growth chamber during flame growth by single crystal were studied. The results show that the highest temperature in the center of the furnace is 3504.3 K with flow rates of 6 L / min and 20 L / min, respectively. Based on this result, it is possible to determine the location of crystal growth or to determine the crystal growth required at a known location With the increase of H2 flow, the temperature in the center and the radial direction of the growth chamber gradually increased, while the position of the highest temperature gradually moved downward with the increase of the O2 flow rate. When the flow rate of the center O2 increased by 1 L / min, the position of the maximum temperature moved downward 5 mm, and the temperature at 110 mm from the nozzle increased by about 230 ° C on average. The temperature distribution of the center and radial of the growth chamber, the impact depth of O2 and the start of combustion The impact of location is small.