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采用低压金属有机化学气相外延法 (LP MOVPE)生长并制作了 1 3μm脊型波导结构偏振无关半导体光放大器 (SOA) ,有源区为基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱 (4C3T)结构 ,压应变阱宽为 6nm ,应变量 1 0 % ,张应变阱宽为 11nm ,应变量 - 0 95 % ;器件制作成 7°斜腔结构以有效抑制腔面反射。半导体光放大器腔面蒸镀Ti3 O5/Al2 O3 减反 (AR)膜以进一步降低腔面剩余反射率至 3× 10 -4以下 ;在 2 0 0mA驱动电流下 ,光放大器放大的自发辐射 (ASE)谱的 3dB带宽大于 5 0nm ,光谱波动小于 0 4dB ,半导体光放大器管芯的小信号增益近 30dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 6dB ,饱和输出功率大于 10dBm ,噪声指数 (NF)为 7 5dB。
A 130 μm ridge-waveguide polarization independent semiconductor optical amplifier (SOA) was grown and fabricated using low-voltage metal-organic chemical vapor-phase epitaxy (LP MOVPE). The active region was based on four piezoresponsive quantum wells and three tensile strain quantum wells (4C3T) structure with a well width of 6nm and a strain of 10%, a strain-strain well of 11nm and a strain of 0 95%. The device is fabricated in a 7 ° oblique cavity structure to effectively suppress the cavity Surface reflection. Ti3 O5 / Al2 O3 antireflection (AR) film was deposited on the surface of the semiconductor optical amplifier to further reduce the residual reflectivity of the surface to less than 3 × 10 -4. Under the driving current of 200 mA, the amplified spontaneous emission of the optical amplifier (ASE ) Spectral 3dB bandwidth of more than 5 0nm, spectral fluctuations less than 0 4dB, semiconductor optical amplifier chip small signal gain of nearly 30dB, in 12 80 ~ 1340nm wavelength range of polarization sensitivity is less than 0 6dB, saturated output power is greater than 10dBm, noise figure NF) is 75dB.