本文叙述了等离子体接触刻蚀的精确就地检测法.这种电终点检测法提供了一个直流电流,该电流与总的开口接触面积成正比,而且信嗓比比光学技术高一个数量级.显然,终点检测对于总接触面积小于3吋芯片面积的0.3%的情况是很有用的.对于p_-~+-n和n_-~+-p结来说,使用这种方法的接触电阻和漏电流与湿法腐蚀或干法腐蚀的接触电阻和泄漏电流是相一致的. This paper describes an accurate in situ detection of plasma contact etching, which provides a direct current that is proportional to the total open contact area and is one order of magnitude higher than that of optical technology.Obviously, Endpoint detection is useful for cases where the total contact area is less than 0.3% of the 3-inch chip area. The contact resistance and leakage current using this approach for p_ ~ ~ + -n and n_ ~ ~ + -p junctions are Wet or dry etching of the contact resistance and leakage current are consistent.