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Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V112Sn-ions in a wide range of fluences: 1×1011ions/cm2–1×1014ions/cm2. Raman spectra in the region between 1200 cm-1and 3500 cm-1show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm-1frequency shift toward lower wavenumber for the D band and ～ 6-cm-1shift toward lower wavenumber for the 2D band are observed at a fluence of1×1014ions/cm2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.
Highly oriented pyrolytic graphites were irradiated with 40.5-Me V and 67.7-Me V112 Sn-ions in a wide range of fluences: 1 × 10 11ions / cm 2 -1 × 10 14 ions / cm 2. Raman spectra in the region between 1200 cm- However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though thely has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ~ 3-cm-1 frequency shift toward lower wavenumber for the D band and ~ 6-cm-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1 × 1014ions / cm2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the gra phene layers activated by radiation-induced strain around ion tracks. wherein, the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks cause electronic decoupling of neighboring graphene layers.