在低频下,1/f噪声是硅双极晶体管的主要噪声.到目前为止,一般认为1/f噪声有二种来源:表面态的存在和体内自由载流子迁移率的涨落,这二种1/f噪声有不同的表现形式.目前还没有统一的模型来描述1/f噪声,这是由于1/f噪声的物理基础还没有一个完整的认识.本文对1/f噪声研究的主要结果作了评述. At low frequencies, 1 / f noise is the dominant noise of silicon bipolar transistors So far it is generally accepted that there are two sources of 1 / f noise: the presence of surface states and the fluctuation of free carrier mobility in the body, There is no unified model to describe 1 / f noise, which is due to the physical basis of 1 / f noise, but not yet a complete understanding of this article on the 1 / f noise study of the main The results were commented.