Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductorfield-effect transistors (MOSFETs) is very important for their practical applicati
By adding an imaginary interacting term proportional to $ip_1p_2$ to the Hamiltonian of a free anisotropic planar oscillator,we construct a new model which is d
Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new contr