从电荷动力学方程导出P~+NR或N~+PR窄基区和长基区非对称结在小注入电流脉冲结束后开路电压随时间衰减的关系式。此函数关系是窄基区杂质任意分布的普遍解。与以往的测量电路比较,在此工作中改进的测量电路扩展了少子有效寿命测量下限。 From the charge-dynamics equations, the relationship between the open-circuit voltage decay with time after the small injection current pulse ends at the asymmetric junction of P ~ + NR or N ~ + PR narrow base region and long base region is deduced. The functional relationship is a general solution to the arbitrary distribution of impurities in the narrow base. Compared with the previous measurement circuit, the improved measurement circuit in this work has extended the lower limit of the effective lifetime measurement of the minority carrier.