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采用热丝和射频等离子体辅助化学气相沉积方法(HF-PECVD),以单晶硅为衬底在低温(<500℃)条件下沉积氮化硼(BN)薄膜材料。通过傅立叶变换红外光谱(FTIR)、X射线衍射(XRD)及扫描电镜(SEM)对薄膜样品的组成和结构进行了分析,探讨了温度和等离子体对沉积BN薄膜的影响。此外,用紫外-可见光分光光度计(UV)测试了石英衬底上生长磷掺杂氮化硼(BPXN1-X)薄膜样品的紫外吸收特征,分析了磷掺杂对BN光学能隙的调节作用以及BPXN1-X薄膜在紫外空间探测领域的应用前景。结果表明,以单晶硅和光学石英玻璃为衬底在低温条件下用HF-PECVD方法可以沉积较高质量的BN薄膜,BN的光学能隙宽度通过磷的掺杂可以得到连续调节,在紫外空间光探测领域具有很大的应用潜力。
Boron nitride (BN) thin film material was deposited on silicon single crystal substrate at low temperature (<500 ℃) by hot wire and RF plasma-assisted chemical vapor deposition (HF-PECVD). The composition and structure of the films were analyzed by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effects of temperature and plasma on the deposition of BN films were also discussed. In addition, the UV absorption characteristics of the samples grown on quartz substrates with phosphorus-doped boron nitride (BPXN1-X) were tested by UV-Vis spectrophotometer (UV). The effects of phosphorous doping on the optical gap of BN As well as the prospect of BPXN1-X thin film in the field of UV space exploration. The results show that high quality BN thin films can be deposited by HF-PECVD using single crystal silicon and optical quartz glass as substrates. The optical gap width of BN can be continuously adjusted by phosphorous doping, Space light detection has great potential applications.