在恒压应力条件下测试了薄栅氧化层的击穿特性 ,研究了TDDB的击穿机理 ,讨论了栅氧化层面积对击穿特性的影响 .对击穿电荷QBD进行了实验测试和分析 ,结果表明 :击穿电荷QBD不是常数 ,它依赖栅氧化层面积和栅电压 .对相关系数进行了拟合 ,给出了QBD的解析表达式 . The breakdown characteristics of the thin gate oxide layer under constant compressive stress were tested, the breakdown mechanism of TDDB was investigated, and the effect of the gate oxide layer area on the breakdown characteristics was discussed.The breakdown charge QBD was experimentally tested and analyzed, The results show that the breakdown charge, QBD, is not constant and depends on the gate oxide area and the gate voltage. The correlation coefficients are fitted and the analytical expression for QBD is given.