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利用化学湿法选择技术和监控电极技术设计并研制了一种新型台面结构超薄基区AlGaAs/GaAs负阻异质结双极晶体管,该器件具有独特且显著的电压控制型负阻特性,其峰谷比可高于120.通过器件模拟分析,解释了该器件产生负阻的原因,即不断增加的集电极电压致使超薄基区穿通,器件由双极管工作状态向体势垒管工作状态转化造成的.另外,模拟结果表明器件可能具有较高频率特性(fT约为60~80GHz).
A novel mesa-based AlGaAs / GaAs negative heterojunction bipolar transistor with a mesa-based structure has been designed and developed by using chemical wet selection technology and monitoring electrode technology. The device has a unique and significant voltage-controlled negative resistance characteristic Peak to valley ratio can be higher than 120. Through the device simulation analysis, explained the negative resistance of the device caused by the reason that the increasing collector voltage resulting in ultra-thin base through, the device working from the bipolar transistor body barrier barrier In addition, the simulation results show that the device may have higher frequency characteristics (fT is about 60 ~ 80GHz).