论文部分内容阅读
研究了真空热处理对掺CH4的SiCOH低介电常数薄膜的电流-电压(I-V)特性、电容-电压(C-V)特性、疏水性能以及微结构的影响.结果表明:在热处理过程中,热稳定性较差的碳氢基团发生了热解吸,使薄膜的漏电流减小、绝缘性能改善,并使薄膜的导电行为更趋于空间电荷限流过程.碳氢基团的热解吸使SiCOH/Si界面的界面态发生改变,导致SiCOH薄膜MIS结构的平带电压VFB发生漂移.封端的碳氢基团热解吸使薄膜表面的开口孔结构减少,薄膜表面变得更平整.但是碳氢基团为疏水基团,其热解吸导致薄膜的疏水性能降低.
The effects of vacuum heat treatment on current-voltage (IV) characteristics, capacitance-voltage (CV) characteristics, hydrophobic properties and microstructure of CH4-doped SiCOH films with low dielectric constants were investigated. The results show that the thermal stability The thermal desorption of the poor hydrocarbon groups led to the decrease of the leakage current, the improvement of the insulation properties and the more conductive charge-current-limiting process of the films. The thermal desorption of hydrocarbon groups made SiCOH / Si interface changes, resulting in the band-gap voltage VFB of MIS structure of SiCOH film drifting.The thermal decomposition of the capped hydrocarbon group reduces the open pore structure of the film surface and the surface of the film becomes more smooth.However, The group is a hydrophobic group, the thermal desorption of which results in a decrease in the hydrophobic properties of the film.