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引言用等离子体化学气相沉积(CVD)制备导电碳最近变得越来越引人注目。用苯的射频等离子体制备薄的碳膜,其目的是在较低的沉积温度下获得很高的导电率碳膜。在一个加热到1000℃的石英基片上,用苯的等离子体沉积获得了导电率为500s/cm的碳膜。
Introduction The preparation of conductive carbon by plasma chemical vapor deposition (CVD) has recently become more and more attractive. A thin carbon film is prepared with a radio frequency plasma of benzene for the purpose of obtaining a very high conductivity carbon film at a lower deposition temperature. On a quartz substrate heated to 1000 ° C, a carbon film having a conductivity of 500 s / cm was obtained by plasma deposition of benzene.