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研究了弱反型时多晶硅薄膜晶体管表面势的分布。考虑到弱反型时,沟道势对表面势的影响可忽略,利用一维泊松方程,得到相应沿沟道方向任一点的表面势模型。通过将基于此模型的表面势二维分布与二维器件仿真结果进行比较,发现弱反型时,其可逼近二维器件中的表面势分布;并发现分别在相异栅电压,相异漏端电压和相异沟道长度时,弱反型时的表面势与其在沟道中所处的相对位置几乎无关。
The distribution of the surface potential of a polysilicon thin film transistor with weak inversion is studied. Considering weak inversion, the influence of channel potential on the surface potential is negligible. Using the one-dimensional Poisson equation, the corresponding surface potential model at any point in the channel direction is obtained. By comparing the two-dimensional distribution of surface potential with the simulation results of two-dimensional devices based on this model, we can find that when the weak inversion is found, it can approximate the surface potential distribution in the two-dimensional device. When the terminal voltage and the channel length are different, the surface potential in the case of weak inversion is almost irrelevant to the relative position in the channel.