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由于光纤通信的迅猛发展,在七十年代出现了许多不同结构形式的发光二极管,以实现各类传输系统对光源的高效率、长寿命与好的频响特性的要求.1975年由RCA实验室研制成功的“限束”边发光二极管就是其中之一.这种结构把发光区集中在边部,克服了有源区严重的自吸收,提高了功率效率.因为工作区的三面与半导体材料相毗连,散热较好,所以LED的光输出对温度相当不敏感.同时这种结构制造简单,特别是与需在N面腐蚀出光孔的面发光二极管相比尤为简单.我们研究了这种“限束”结构的发光器件并且作了适当的改进.首先把电极条宽的尺寸从100微米缩小为50微米,以求与芯径为50微米和数值孔径为0.2
Due to the rapid development of optical fiber communication, many different types of light-emitting diodes have appeared in the seventies, in order to achieve the requirements of various transmission systems for high efficiency, long life and good frequency response characteristics of light sources. In 1975 by the RCA Laboratory One of them is the successful development of the “limited” side light-emitting diode, which concentrates the light emitting area on the side, overcoming the serious self-absorption of the active area and improving the power efficiency because the three sides of the work area and the semiconductor The material is adjacent, heat dissipation is good, so the LED light output is very insensitive to temperature.At the same time this structure is simple to manufacture, especially with the surface light-emitting diodes to be etched in the N-facets is particularly simple.We have studied this “Beam limiting ” structure of the light-emitting device and made the appropriate improvements First electrode width of the size reduced from 100 microns to 50 microns to meet the core diameter of 50 microns and a numerical aperture of 0.2