最近。日本电气公司和东芝公司各自宣布开发出目前世界上集成度最高、存贮量最大的4MDRAM。日本电气开发的是运算速度快的NMOS构造的4M存贮器。在一块6.2毫米×16.0毫米见方的芯片中,集积了九百二十万个三极管之类的元器件,线宽为0.8微米。东芝开发的是功耗低的CMOS构造的4M存贮器。在7.84毫米×17.48毫米大小的芯片里,集积了八百七十万个元器件,线宽为1微米 recent. Nippon Electric and Toshiba each announced the development of the world’s most integrated and memory-rich 4MDRAM. Nippon Electric has developed a 4M memory with a fast NMOS operation. In a 6.2 mm × 16.0 mm square chip, 9.2 million transistors and other components are integrated and the line width is 0.8 μm. Toshiba has developed a low-power CMOS configuration 4M memory. In 7.84 mm × 17.48 mm chip size, the accumulation of 8.7 million components, line width of 1 micron