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为了研究图形化蓝宝石衬底(PSS)的结构和形貌对GaN基发光二极管(LED)光学性能的影响,对PSS的制备工艺和参数进行了调控,从而形成具有不同填充因子的蒙古包形PSS(HPSS)和金字塔形PSS(TPSS)两种衬底,用于生长和制备蓝光LED芯片。通过对TPSS-LED的光学性能测试和分析得到,随着PSS填充因子的增大,LED的光输出功率也增大;进而比较具有相同填充因子的HPSS和TPSS的光学性能表明,HPSS明显优于TPSS。因此,PSS填充因子的增大,能够提高LED的光输出功率;优化PSS的结构可以改善LED中光出射途径,从而更有效提高LED的光发射效率。
In order to study the influence of the structure and morphology of the patterned sapphire substrate (PSS) on the optical properties of GaN-based light-emitting diodes (LEDs), the fabrication process and parameters of PSS were controlled to form Mongolian PSS with different filling factors HPSS) and pyramidal PSS (TPSS) substrates for the growth and preparation of blue LED chips. The optical performance of the TPSS-LED was tested and analyzed. With the increase of the PSS fill factor, the light output power of the LED also increased. The optical properties of HPSS and TPSS with the same fill factor showed that HPSS was superior to TPSS. Therefore, the increase of the PSS fill factor can improve the light output power of the LED. Optimizing the structure of the PSS can improve the light exit path in the LED and thus improve the light emission efficiency of the LED more effectively.