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不同剂量的N离子被注入到化学气相沉积金刚石膜内 ,研究了表面结构及场发射特性的变化 .Raman谱和x射线光电子能谱分析表明 ,N离子的注入破坏了金刚石膜表面原有的sp3结构 ,并在膜内形成大量的sp2 C—C和sp2C—N键 .样品的场发射测试显示N离子的注入显著提高了金刚石膜场发射特性 ,膜的场发射阈值电场从注入前的18V μm下降到注入后的 4V μm .金刚石膜场发射特性的提高归因于N离子注入后膜内sp2 C键含量的增加和体内缺陷带的形成 ,这些变化能改变膜的表面功函数 ,提高Feimi能级 ,降低电子隧穿表面的能量势垒 .
Different doses of N ions were implanted into the CVD diamond films to study the changes of surface structure and field emission characteristics.The analysis of Raman spectrum and X-ray photoelectron spectroscopy showed that N ions infiltrated the original sp3 Structure and formed a large number of sp2 C-C and sp2C-N bonds in the film.The field emission test showed that the injection of N ions significantly enhanced the film field emission characteristics of the diamond film, the field emission threshold of the film from 18V μm To 4 V μm after implantation.The improvement of diamond film field emission properties is attributed to the increase of sp2 C bond content in the film and the formation of in vivo defect bands after N ion implantation.These changes can change the surface work function of the film and increase the Feimi energy Level, reducing the energy barrier of electron tunneling surface.