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为了提高准连续输出功率为×102W量级的半导体激光器的输出功率和可靠性,采用双面散热方式提高传导冷却封装的散热能力。结果表明,采用改进的封装方式后,激光器的最高输出功率由91.6 W提高到98.4W,阈值电流由15.6 A减小到15.1 A,斜率效率由1.09 W/A提高到1.16 W/A,插头效率略有增加。激光器在100 A工作电流时,有源区的温度和激光器的热阻都有所减小,说明改进的封装方式具有更好的散热性能。
In order to improve the output power and reliability of a semiconductor laser of quasi-continuous output power of the order of × 102 W, a double-sided heat dissipation method is adopted to improve the heat dissipation capability of the conductive cooling package. The results show that the maximum output power of the laser is increased from 91.6 W to 98.4 W, the threshold current is reduced from 15.6 A to 15.1 A, and the slope efficiency is increased from 1.09 W / A to 1.16 W / A. The plug efficiency slightly increased. When the laser is operated at 100 A, the temperature of the active region and the thermal resistance of the laser are reduced, indicating that the improved package has better heat dissipation performance.