提高功率密度和性能,同时降低成本,从来都是功率半导体技术的前进方向。本文指出,在可预见的未来,这个趋势还将继续下去,并且新型半导体材料的发展甚至会加剧这一趋势。传统的硅材料与诸如碳化硅(SiC)和氮化镓(GaN)等新材料的一个共同发展趋势是提高电流密度,并且需要逐步实现高达200℃的更高工作温度。主要受要求高得多的负载和温度循环 Improve power density and performance, while reducing costs, power semiconductor technology has always been the way forward. This article points out that this trend will continue for the foreseeable future, and the development of new semiconductor materials may even exacerbate this trend. A common trend of traditional silicon materials with new materials such as silicon carbide (SiC) and gallium nitride (GaN) is to increase the current density and to gradually achieve higher operating temperatures up to 200 ° C. Mainly subject to much higher load and temperature cycling