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已经发现,在 Hg_(1-x)Cd_xTe(x0.2)上电子沉积的 ZnS 界面的低温诱导劣化会严重地影响远红外光电二极管的性能。这些使用硼注入方法制造的光电二极管的 R_oA,通过与结面成正比的形成—复合成份,被限制在77K.在短时间(约4小时)的热处理之后
It has been found that the low temperature induced degradation of the ZnS interface electron-deposited on Hg_ (1-x) Cd_xTe (x0.2) can seriously affect the performance of the far-infrared photodiode. The R_oA of these photodiodes fabricated using the boron implantation method was limited to 77 K by forming a composite composition proportional to the junction.After a short time (about 4 hours) heat treatment