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为了降低2μm半导体激光器的阈值电流并提高器件的输出功率,设计了InGaAsSb/AlGaAsSb应变补偿量子阱结构,并利用SimLastip软件对器件进行了数值模拟。研究表明,在势垒中适当引入张应变可以改善量子阱的能带结构,提高对载流子的限制能力。当条宽为120μm、腔长为1 000μm时,采用应变补偿量子阱结构的激光器的阈值电流为91mA,斜率效率为0.48W/A。与压应变量子阱激光器相比,器件性能得到明显的改善。
In order to reduce the threshold current of the 2μm semiconductor laser and increase the output power of the device, an InGaAsSb / AlGaAsSb strain compensated quantum well structure is designed, and the device is simulated by SimLastip software. The research shows that proper introduction of tensile strain in the potential barrier can improve the energy band structure of the quantum well and enhance the confinement ability of carriers. When the width is 120μm and the cavity length is 1000μm, the threshold current of the laser with strain compensation quantum well structure is 91mA, and the slope efficiency is 0.48W / A. Compared with the compressive strain quantum well laser device performance has been significantly improved.