论文部分内容阅读
本文从MOS电容瞬态微分方程的特解,提出了一个直接从MOS电容c-t曲线换算少子寿命的方法。此法十分简单,只需进行一次必要的计算,就可以从c-t曲线读数,迅速确定少子寿命及其随耗尽层深度的变化。本法等同于Zerbst图解法,因而有相同的准确性,但不需作曲线。在Zerbst法失效时,也能给出一个估计值。几种典型的c-t曲线,给出了少子寿命随耗尽层深度的变化。此法适用于需作大量测量的工艺监控及Si材料检查。
In this paper, from the special solution of transient differential equation of MOS capacitor, a method of calculating minority carrier lifetime directly from the c-t curve of MOS capacitor is proposed. This method is very simple. With only one necessary calculation, the c-t curve reading can be quickly determined to determine the lifetime of young children and their variation with depth of depletion layer. This law is equivalent to the Zerbst diagram, and therefore has the same accuracy, but without the need for curves. An estimate can also be given when the Zerbst method fails. Several typical c-t curves give the variation of the lifetime of the minority-bearing depletion layer. This method is suitable for process monitoring and Si material inspection required for a large number of measurements.