结合金属纳米颗粒辅助化学刻蚀法制备Si纳米线和低压化学气相外延自组织生长Ge纳米点制备了Ge纳米点/Si纳米线复合结构,采用电子显微镜、微区原子力/拉曼联合测试系统进行了微结构表征。Ge纳米点基本均匀地分布于Si纳米线上,通过改变生长参数可有效控制Ge纳米点的尺寸和密度。在非常扁薄的无支撑的纳米点/线复合结构中,由于应力和热效应的作用使Si和Ge的拉曼散射特征峰发生了较大的红移。 Ge nanodots / Si nanowires composite structures were prepared by metal nanosize-assisted chemical etching and self-organized growth of Si nanowires by low-pressure chemical vapor phase epitaxy. Electron microscopy and atomic force / Raman microscopy Microstructural characterization. Ge nanodots are distributed uniformly on Si nanowires. The size and density of Ge nanodots can be effectively controlled by changing the growth parameters. In the very thin, unsupported nanodots / wire composite structures, the Raman scattering characteristic peaks of Si and Ge undergo a large red shift due to the stress and thermal effects.