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为满足电力电子电路对功率开关二极管高频化的发展要求,提出了一种大功率低功耗快速软恢复p+(SiGeC)-n--n+异质结二极管.与常规的Sip-i-n二极管相比,在正向电流密度不超过1000A/cm2情况下,p+(SiGeC)-n--n+二极管的正向压降减少了约1/5,有效降低了器件的通态功耗;反向恢复时间缩短了一半多,反向峰值电流降低了约25%,软度因子提高了1.3倍,而反向阻断电压和反向漏电流基本不发生变化.研究发现,Ge和C的含量是影响p+(SiGeC)-n--n+二极管特性的重要参数,这为器件结构设计提供了更大的自由度.
In order to meet the requirements of power electronics for high frequency switching of power switching diodes, a high power, low power and fast soft recovery p + (SiGeC) -n - n + heterojunction diode is proposed. Compared with the conventional Sip-in diode The forward voltage drop of the p + (SiGeC) -n - n + diode is reduced by about 1/5 at the forward current density of 1000A / cm2, which effectively reduces the on-state power dissipation of the device. The reverse recovery The time is shortened by more than half, the reverse peak current is reduced by about 25%, the softness factor is increased by 1.3 times, while the reverse blocking voltage and reverse leakage current basically do not change.The study found that the content of Ge and C is the impact p + (SiGeC) -n - n + diode characteristics of the important parameters, which provides greater freedom for the design of the device structure.