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A split-drain magnetic field-effect transistor (MAGFET)based on a nano-polysilicon thin film transistor (TFT) is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated onh 100 ihigh resistivity silicon substrate by CMOS technology. When drain–source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 m/160 m, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.
A split-drain magnetic field-effect transistor (MAGFET) based on a nano-polysilicon thin film transistor (TFT) is proposed, which contains one source, two drains and one gate. CMOS technology. When drain-source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 m / 160 m, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA / T and 55 mV / T, respectively. Through nano-polysilicon thin films and nano-polysilicon thin films / high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be significantly more.