论文部分内容阅读
本文报导采用汞回流垂直浸渍液相外延方法,在CdTe或CdZnTe(111)面的衬底上生长Hg_(1-x)Cd_xTe单晶,其厚度为20μm,面积为1.5×2cm~2,组分x从0.18到0.7,组分均匀性Δx≈0.001。样品经热处理以后,x=0.2的n型样品电子浓度n≈1×10~(15)cm~(-3),电子迁移率μ≈10~5cm~2/v·s,p型样品空穴浓度p≈2×10~(16)cm~(-3),空穴迁移率μ≈300cm~2/v·s,双晶衍射显示样品的半峰宽为90arc sec,X光貌相分析表明外延层晶体结构优良。样品的红外光谱测量,电学参数测量以及载流子寿命测量表明样品具有优良的光电性质。
This paper reports the growth of Hg_ (1-x) Cd_xTe single crystals on a CdTe or CdZnTe (111) surface by mercury intrusion vertical immersion liquid phase epitaxy with a thickness of 20μm and an area of 1.5 × 2cm ~ 2. x from 0.18 to 0.7, component uniformity Δx≈0.001. After the sample was heat-treated, the electron concentration of n-type sample with x = 0.2 was n≈1 × 10 ~ (15) cm -3 and the electron mobility was μ≈10 ~ 5cm ~ 2 / v · s. The results show that the half-width of the sample is 90 arcsec at double p-ray diffraction (p≈2 × 10 ~ (16) cm -3) and hole mobility μ≈300 cm ~ 2 / v · s Layer crystal structure is excellent. The infrared spectrum measurement, electrical parameter measurement and carrier lifetime measurement show that the sample has excellent optoelectronic properties.