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讨论了具有小的沟道长宽比的结型场效应器件的特性。这种器件的结与通常在场效应器件分析中所考虑的平行平面结有很大的不同。结耗尽区的扩展超过栅结未端是很重要的。为了计算包括近沟道末端的圆形栅几何形状在内的结耗尽区形状,发展了一种模型。此模型基本上是肖克莱的原始模型对于非平行栅结的引伸。几种沟道长宽比的结果表明,对于小的长宽此,其终端伏安特性与肖克莱的模型略有不同,对于大的长宽比则与肖克莱模型的结果一致。本模型与以前模型的主要不同点是:在电流饱和区域不存在沟道的完全夹断。同时也讨论了在沟道漏端附近载流子速度饱和的作用。对于具有小的沟道长宽比的器件,载流子速度的饱和大大的减小了漏电流的饱和值。速度饱和主要取决于与材料常数和器件尺寸有关的单一参数。
The characteristics of junction field effect devices with a small channel aspect ratio are discussed. The junction of such a device is quite different from the parallel plane junction usually considered in field effect device analysis. It is important that the junction depletion region extend beyond the end of the grid junction. In order to calculate the junction depletion zone shape, including the circular grid geometry near the end of the channel, a model was developed. This model is basically an extension of Shockley's original model for non-parallel gate junctions. The results of several kinds of channel aspect ratios show that the terminal volt-ampere characteristics are slightly different from Shockley's model for small length and width, and the large aspect ratio is consistent with the Shockley's model. The main difference between this model and the previous model is that there is no complete pinch off of the channel in the current saturation region. The effect of saturation of carrier velocity near the drain of the channel is also discussed. For devices with a small channel aspect ratio, the saturation of the carrier velocity greatly reduces the saturation value of the leakage current. Velocity saturation mainly depends on a single parameter related to material constants and device dimensions.