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基于8英寸绝缘栅双极型晶体管(IGBT)生产线的建设,重点解决了8英寸IGBT先进工艺技术、第四代高压双扩散金属氧化物半导体(DMOS+)IGBT技术和第五代沟槽栅IGBT技术等关键技术问题,实现了高压IGBT芯片制造从6英寸到8英寸的技术突破,自主开发的1600 A/1.7 k V与1500 A/3.3 k V IGBT模块已经被成功制造并通过考核,现已应用于轨道交通牵引系统。
Based on the construction of 8-inch insulated gate bipolar transistor (IGBT) production line, the company focused on solving the problems of 8-inch IGBT advanced process technology, the fourth generation of high-voltage double-diffused metal oxide semiconductor (DMOS +) IGBT technology and the fifth generation of trench gate IGBT technology The key technical issues have been the technological breakthrough in the manufacture of high-voltage IGBT chips from 6 inches to 8 inches. The independently developed 1600 A / 1.7 k V and 1500 A / 3.3 k V IGBT modules have been successfully manufactured and passed the tests and have been applied to Rail Transit Traction System.