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采用离子注入掺磷后测量了膜的霍耳迁移率,研究了不同淀积条件对膜特性的影响。表明最佳淀积温度为950℃左右。偏离此温度,迁移率就明显下降;在940—970℃生长温度下,以2μ/分的速率生长的膜比5μ/分生长的膜有更高的迁移率;H_2处理温度对迁移率没有明显的影响,但随H_2处理温度的升高,膜的本征载流子浓度迅速上升。焰熔衬底与直拉衬底相比,膜的霍耳迁移率相近,但场效应迁移率低一些。
The Hall mobility of the films was measured by ion implantation of phosphorus and the effect of different deposition conditions on the film properties was investigated. The best deposition temperature is about 950 ℃. Deviation from this temperature resulted in a significant decrease in mobility; at a growth temperature of 940-970 ° C, the membrane grown at a rate of 2 μ / min had a higher mobility than the 5 μ / min growth membrane; the H 2 treatment temperature had no significant effect on the mobility However, with the increase of H2 treatment temperature, the intrinsic carrier concentration of the membrane increased rapidly. Compared with the Czochralski substrate, the Holzer migration rate of the flame-fused substrate is similar, but the field effect mobility is lower.