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ＣｅＯ＿２改性的ＳｒＴｉＯ＿３陶瓷采用传统的陶瓷工艺制备。ＳｒＴｉＯ＿３基质与ＣｅＯ＿２按化学式ＳｒＴｉＯ＿３＋ｘ（ＣｅＯ＿２ｎＴｉＯ＿２）配比［ｘ（ｗｔ％）分别为２、５、１０、１５、２０、２５和３０］。样品在１４００℃下烧结１ｈ。Ｃｅ在ＳｒＴｉＯ＿３陶瓷中起施主杂质作用。扫描电镜形貌分析和Ｘ射线物相观察表明，在此种陶瓷中有Ｃｅ＿２Ｏ＿３第二相即玻璃相存在，并对毒害ＳｒＴｉＯ＿３陶瓷半导体化的杂质有固溶性质；同时，Ｃｅ＿２Ｏ＿３第二相还具有减薄晶粒表面氧化层的作用，从而增加了晶粒电导特性。在室温下，ＣｅＯ＿２改性的半导体ＳｒＴｉＯ＿３陶瓷具有畸变的立方结构。
CeO_2 modified SrTiO_3 ceramic is prepared by traditional ceramic process. The ratio of SrTiO_3 matrix to CeO_2 according to the formula of SrTiO_3 + x (CeO_2nTiO_2) [x (wt%)] is 2, 5, 10, 15, 20, 25 and 30, respectively. Samples were sintered at 1400 ° C for 1 h. Ce in the SrTiO_3 ceramic host impurity role. Scanning electron microscopy and X-ray phase observation showed that Ce 2 O 3 was the second phase in this kind of ceramics, that is, the glass phase existed and had solid solution properties to the semiconducting impurities of poisoning SrTiO 3 ceramics. Meanwhile, the second phase of Ce 2 O 3 also had a decrease Thin grain surface oxide layer, thereby increasing the grain conductivity characteristics. At room temperature, CeO 2 modified semiconducting SrTiO 3 ceramics have a distorted cubic structure.