A superconductor single photon detector based on NbN nanowire was fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) for infrared photon detection. When biased well below its critical current at 4.2 K, NbN nanowire is very sensitive to the incident photons. Typical telecommunication photons with a wavelength of 1550 nm were detected by this detector. Data analysis indicates the repeating rate of the device with 200 nm NbN nanowire may be up to 100 MHz, and the quantum efficiency is about 0.01% when biased at 0.95Ic. A superconductor single photon detector based on NbN nanowire was fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) for infrared photon detection. When biased well below its critical current at 4.2 K, NbN nanowire is very sensitive to the incident photons . Typical telecommunication photons with a wavelength of 1550 nm were detected by this detector. Data analysis indicates the repeating rate of the device with 200 nm NbN nanowire may be up to 100 MHz, and the quantum efficiency is about 0.01% when biased at 0.95Ic .