Highly flexible and excellent performance continuous carbon nanotube fibrous thermoelectric modules

来源 :中国物理B(英文版) | 被引量 : 0次 | 上传用户:ciper618
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
A highly flexible and continuous fibrous thermoelectric (TE) module with high-performance has been fabricated based on an ultra-long single-walled carbon nanotube fiber,which effectively avoids the drawbacks of traditional inorganic TE based modules.The maximum output power density of a 1-cm long fibrous TE module with 8 p-n pairs can reach to 3436 μW.cm-2,the power per unit weight to 2034 μ-W.g-1,at a steady-state temperature difference of 50 K.The continuous fibrous TE module is used to detect temperature change of a single point,which exhibits a good responsiveness and excellent stability.Because of its adjustability in length,the flexible fibrous TE module can satisfy the transformation of the temperature difference between two distant heat sources into electrical energy.Based on the signal of the as-fabricated TE module,a multi-region recognizer has been designed and demonstrated.The highly flexible and continuous fibrous TE module with excellent performance shows a great potential in diversified applications of TE generation,temperature detection,and position identification.
其他文献
We proposed a practical way for mapping the results of coarse-grained molecular simulations to the observables in hydrogen change experiments.By combining an at
Src SH3 protein domain is a typical two-state protein which has been confirmed by research of denaturant-induced unfolding dynamics.Force spectroscopy experimen
The room-temperature (RT) bonding mechanisms of GaAs/SiO2/Si and GaAs/Si heterointerfaces fabricated by surface-activated bonding (SAB) are investigated using a
Ultra-high-voltage (UHV) junction field-effect transistors (JFETs) embedded separately with the lateral NPN (JFET-LNPN),and the lateral and vertical NPN (JFET-L
The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between group Ⅲ-Ⅴ elements and Si.High-crystallin
Electron density plays an important role in determining the properties of functional materials.Revealing the electron density distribution experimentally in rea
Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenome
We investigate the nonlocal advantage of quantum coherence (NAQC) and entanglement for two spins coupled via the Heisenberg interaction and under the intrinsic
The various advantages of extended-source (ES),broken gate (BG),and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-e
Indium selenide,a Ⅲ-Ⅴ group semiconductor with layered structure,attracts intense attention in various photoelectric applications,due to its outstanding prope