IBM近日开发了两项可提高半导体元件性能,降低耗电量的半导体制造技术。一项是可直接将应变硅和硅及绝缘膜结构(SOD)相结合的SSDOl技术,另一项技术是在生产互补金属氧化物半导体(CMOS)时,在同一晶圆上使用2种硅基层。在过去的研究中心,IBM表示“通过使用应变硅,能将半导体元件性能提高20% IBM recently developed two semiconductor manufacturing technologies that improve the performance of semiconductor components and reduce power consumption. One is the SSDOl technology that directly combines strained silicon with silicon and the insulating film structure (SOD). The other is the use of two silicon based layers on the same wafer in the production of complementary metal-oxide-semiconductor (CMOS) . In past research centers, IBM said ”by using strained silicon, the performance of semiconductor components can be increased by 20%