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采用溶胶–凝胶工艺在Pt/Ti/Si O2/Si基片上,通过引入钽镁酸钡[Ba(Mg1/3Ta2/3)O3,BMT]缓冲层,制备了锆钛酸铅[Pb(Zr0.52Ti0.48)O3,PZT]铁电薄膜。研究了BMT缓冲层对PZT铁电薄膜结晶和性能的影响。结果表明:引入BMT缓冲层利于PZT薄膜的生长;PZT薄膜具有钙钛矿结构,且没有裂纹、结晶良好、致密性好;缓冲层的厚度对PZT铁电薄膜的微观结构和铁电性能有重要影响。随BMT缓冲层厚度增加,PZT晶粒增大,介电损耗tanδ逐渐减少,介电常数εr和剩余极化强度Pr先增大后减少,矫顽场Ec先减少后增大。当BMT缓冲层厚约为10 nm时,PZT薄膜具有最优的铁电性能:εr=1 850,Pr=20.2μC/cm2,Ec=43.9 k V/mm。这与BMT与PZT具有相似的晶格常数、较小的晶格失配度和相近的禁带宽度有关。
The lead zirconate titanate [Pb (Zr0) 2 was prepared by sol-gel process on a Pt / Ti / Si O2 / Si substrate by introducing a BaTiO3 [Ba (Mg1 / 3Ta2 / .52Ti0.48) O3, PZT] ferroelectric thin film. The effect of BMT buffer layer on the crystallization and properties of PZT ferroelectric thin films was investigated. The results show that: the introduction of BMT buffer layer is conducive to the growth of PZT thin film; PZT thin film has a perovskite structure, and no cracks, good crystal, compact; buffer layer thickness PZT ferroelectric thin film microstructure and ferroelectric properties are important influences. As the thickness of BMT buffer layer increases, the grain size of PZT increases, the dielectric loss tanδ decreases gradually, the dielectric constant εr and remanent polarization Pr increase first and then decrease, and the coercive field Ec decreases and then increases. When BMT buffer layer is about 10 nm thick, the PZT thin film has the best ferroelectric properties: εr = 1 850, Pr = 20.2μC / cm2 and Ec = 43.9kV / mm. This is similar to the BMT and PZT lattice constants, and the smaller lattice mismatch is related to the similar band gap.