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本文介绍了利用ＡＥＳ、ＸＰＳ和Ｃ－Ｖ法对经过硫化物处理后的ＩｎＳｂ表面进行研究，其结果显示硫在ＩｎＳｂ表面替代锑或填补锑的空白与铟形成共价键，从而减少了ＩｎＳｂ与氧化层之间的表面态。
This article describes the use of AES, XPS and C-V sulfide after sulfide-treated InSb surface, the results show that sulfur in the InSb surface to replace antimony or antimony filled blank and indium form covalent bonds, thereby reducing the InSb and The surface state between the oxide layers.