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我们已经研究和验证了一种测试绝缘体上硅(SOI)材料界面的辐射响应技术,它采用全SOI结构和深腐蚀SOI结构电容电压(C-V)曲线数据叠合法得到三个界面各自的C-V曲线。根据这些C-V曲线,就可以测定SiO_2俘获电荷和界面态。此技术可作为对不同SOI材料的辐射响应进行比较的一种方法。本文中,我们是检测总剂量辐射对融熔再结晶法制备的SOI材料的影响。
We have investigated and validated a radiation response technique for testing the interface of SOI materials. The C-V curves of the three interfaces have been obtained by using the C-V curve data stack method with a SOI structure and a deep-eroded SOI structure. Based on these C-V curves, SiO 2 capture charge and interface states can be determined. This technique can be used as a method of comparing the radiative response of different SOI materials. Here, we examine the effect of total dose radiation on the SOI material prepared by the melt recrystallization method.