This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity.The simulation convergence is greatly improved by this method.An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement.The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting.The model is verified with an LC VCO design,and exhibits excellent convergence during simulation.The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(RF) circuit design. This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias- dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. Original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement. The interconnection parasitics of the cross- coupled MOSFETs are modeled based on vector fitting. model is verified with an LC VCO design, and exhibits excellent convergence during simulation. results show as high as 60.5% and 61.8% in simulation efficiency and accuracy, respectively, indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.