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采用无机溶胶－凝胶法制备ＶＯ２相变薄膜，该薄膜相变时的电阻（率）突变可达４～５个数量级。并用ＸＲＤ，ＤＳＣ和ＴＧＡ法研究了制膜过程中干凝胶膜的层状非晶纳米结构。通过适当的非晶晶化过程及随后Ｖ２Ｏ５→ＶＯ２转变的真空热处理，可获得带有空洞（ｖｏｉｄ）结构的低密度纳米薄膜，从而使电阻（率）突变特性异常优异
VO2 phase-change film was prepared by inorganic sol-gel method. The resistance (rate) change of the film was up to 4 to 5 orders of magnitude. The layered amorphous nanostructures of xerogel films were investigated by XRD, DSC and TGA. Through proper amorphous crystallization process and subsequent vacuum heat treatment of V2O5 → VO2 transformation, a low-density nano-film with a void structure can be obtained, so that the abrupt change in resistance (rate) is abnormally excellent