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In diffusion to blue light-emitting diode(LED) wafers is performed by the inductive coupled plasma(ICP)treatment of a covering layer of indium tin oxide(ITO) on the wafer surface.The electrical property of the ptype contact is improved and the redshift of photoluminescence(PL) from the InGaN quantum well of the wafer is found.Measurements by x-ray photoelectron spectroscopy(XPS) demonstrate that In atoms have diffused into p-GaN.Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment.A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data.Finally,LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared.Under an injection current of 20 mA,LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23%in the light output,respectively.
In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. Electrical property of the ptype contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the red shift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Unit an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.