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1 前言近年来,超 LSI 开发进展十分惊人。虽然代表0.5μm 时代器件的16MDRAM,由于受到当时半导体业不景气的影响而其开发比当初预测要迟些,但其批量生产逐渐达到稳定化。同时,下一代器件——64MDRAM 和256MDRAM 的研究开发依然如预测的进度进行着,现状是:丝毫未感到开发进度在放缓。通常的开发程序是:在上述最尖端器件的开发初期,为了制作超微细电路图形,采用了可同时获得高分辨率和深焦的电子束(EB)直接刻写;而当批量加工时,则逐渐谋求向高效光刻过渡。这样的开发程序从16MDRAM 时代就十分明确,这是由于光刻技术中的各种技术课题逐渐解决所致。
1 Introduction In recent years, the development of ultra-LSI is astonishing. Although the 16M DRAMs, representing 0.5μm devices, were more developed later than originally predicted due to the downturn in the semiconductor industry at that time, their mass production was gradually stabilized. At the same time, the next generation of devices - 64MDRAM and 256MDRAM research and development is still in progress as predicted, the status quo is: did not feel the development progress is slowing down. The usual development process is: In the early stages of the development of these state-of-the-art devices, direct electron beam (EB) writing with high resolution and deep coherence was used for making ultrafine circuit patterns; and when bulk processing, Seeking to transition to efficient lithography. This development process from the 16MDRAM era is very clear, this is due to the gradual resolution of various technical topics in lithography.