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绝缘层上的硅单晶生长(SOI)技术,是可能实现高性能、高可靠性CMOS—LSI或高性能薄膜晶体管固体显示等器件的新的半导体工艺技术。特别是它是制作新功能器件,或即将突破二维VLSI性能极限而实现三维电路器件的必不可少的技术。
Silicon single crystal growth (SOI) technology on insulating layers is a new semiconductor process technology that makes it possible to implement high performance, high reliability CMOS-LSI or high performance thin film transistor solid state displays. In particular, it is an indispensable technology for producing new functional devices or for realizing three-dimensional circuit devices that are about to break the limit of 2D VLSI performance.