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研究了超薄 (～ 1 0 nm) Co Si2 /Si的肖特基势垒接触特性 .Co( 3— 4nm) /Ti( 1 nm)双层金属通过快速热退火在 Si( 1 0 0 )衬底上形成超薄 Co Si2 薄膜 .X射线衍射测试表明该薄膜具有较好的外延特性 .用 I- V、C- V方法在 82— 332 K温度范围内测试了 Co Si2 /Si的肖特基势垒特性 .用弹道电子发射显微术直接测量了微区肖特基势垒高度 .测试表明 ,用 Co/Ti/Si方法形成的超薄Co Si2 /Si接触在室温时具有优良的肖特基势垒特性 ,I- V方法测得的势垒高度为 0 .59e V,其理想因子为 1 .0 1 ;在低温时 ,I- V方法测得的势垒高度随温度降低而降低 ,理想因子则升高 .采用肖特基势垒不均匀性理论 ,并假设势垒高度呈高斯分布 ,实验数据和理论吻合较好
The Schottky barrier contact characteristics of ultra-thin (~ 10 nm) Co Si2 / Si films were investigated by means of rapid thermal annealing of Si (100) X-ray diffraction test showed that the film has good epitaxial characteristics.It was tested by the I-V, C-V method in the temperature range of 82- 332 K Schottky Co Si2 / Si Barrier properties.The micro-region Schottky barrier height was measured directly by ballistic electron emission microscopy.The results show that the ultrathin Co Si2 / Si contact formed by the Co / Ti / Si method has excellent Schottky Based on the base-barrier characteristics, the barrier height measured by the I-V method is 0.59eV and the ideal factor is 1.01. At low temperatures, the barrier height measured by the I-V method decreases with decreasing temperature, The ideal factor is increased.Using Schottky barrier inhomogeneity theory, and assuming that the barrier height is Gaussian distribution, the experimental data and the theory match well