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This paper reports some results in the investigation of deep levels in titaniumdiffusion-doped silicon;there Ti-related doep levels are observed by the DLTS.There are two elettrontraps located at E_c-0.23eV and E_c-0.53eV in n-Si(Ti)and a hole trap located at E_v+0.32eV in p-Si(Ti).Thermal activation energy and the capture cross-section in the range of experimentaltemperature and other related parameters for these traps are obtained by transient capacitance studies.Furthermore,from our experimental results,a brief discussion on the bonding feature of traps and ontheir pinning to which band is given.
This paper reports some results in the investigation of deep levels in titanium diffused-doped silicon; there are Ti-related doep levels are observed by the DLTS. There are two eletrons located at E_c-0.23eV and E_c-0.53eV in n-Si (Ti ) and a hole trap located at E_v + 0.32 eV in p-Si (Ti). Thermal activation energy and the capture cross-section in the range of experimental temperature and other related parameters for these traps are obtained by transient capacitance studies. Futurertherm, from our experimental results, a brief discussion on the bonding feature of traps and on the pinning to which band is given.