本文根据EPR基本理论和量子化学的一些计算结果,并对照中子辐照GaAs样品中EPR“As_(Ga)”谱线形状随退火温度变化的实验结果,认为为了揭示EPR“As_(Ga)”缺陷本性必须考虑包括As_(Ga)周围多层配位原子在内的基体磁性核对于未成对电子的超精细(hf)相互作用。更进一步,本文还讨论了空位对EPR“As_(Ga)”谱线宽度和一级hf常数等影响,从而首次明确指出GaAs中EPR“As_(Ga)”可鉴别为As_(Ga)及其有关空位络合物。 In this paper, based on the basic theory of EPR and some calculations of quantum chemistry, and in comparison with the experimental results of the change of the As_ (Ga) line shape of EPR in neutron irradiated GaAs samples with the annealing temperature, it is considered that in order to reveal the "As_ (Ga) The defect nature must consider the superfine (hf) interaction of the unborn electrons of the matrix magnetic core including the multi-layer coordination atoms around As_ (Ga). Furthermore, the influence of vacancies on the width of the As_ (Ga) line and the first-order hf constant of the EPR are discussed. It is the first time that it is clearly pointed out that the As_ (Ga) of EPR in GaAs can be identified as Ga Gap complex.