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用化学气相沉积法在硅衬底上合成了宽1μm左右、长数十微米的ZnO纳米带.采用微栅模板法得到单根ZnO纳米带半导体器件,由I-V特性曲线测得室温下ZnO纳米带电阻约3 M,电阻率约0.4·cm.研究了在20—280 K温度范围内单根ZnO纳米带电阻随温度的变化.结果表明:在不同温度区间内电阻随温度变化趋势明显不同,存在两种不同的输运机制.在130—280 K较高的温度范围内,单根ZnO纳米带电子输运机制符合热激活输运机制,随着温度继续降低(<130 K),近邻跳跃传导为主导输运机制.
A ZnO nanoribbon with a width of about 1μm and a length of tens of micrometers was synthesized by chemical vapor deposition on a silicon substrate. A single ZnO nanoribbon semiconductor device was obtained by using a microgrid template method. The ZnO nanoribbons at room temperature The resistance is about 3 M and the resistivity is about 0.4 · cm. The change of resistance of single ZnO nanobelts with temperature in the temperature range of 20-280 K was studied. The results show that the resistance changes obviously with the temperature in different temperature range, Two different transport mechanisms. In the higher temperature range of 130-280 K, the single electron transport mechanism of ZnO nanoribbons conforms to the mechanism of heat-activated transport. As the temperature continues to decrease (<130 K), the neighboring hopping conduits To dominate the transport mechanism.