用加热分解α-G_2S_3的方法在GaAs(100)表面上气相沉积了准单晶的GaS钝化膜。俄歇电子能谱深度分布测量表明,长成的膜与衬底间界面清晰。用紫外光电子能谱和低能电子能量损失谱结合的方法得到了完整的GaS/GaAs异质结能带结构图,即价带偏移1.5eV,导带偏移0.3eV,界面附近存在0.4eV的能带弯曲。气相淀积方法简单实用,有希望发展成为GaAs器件制作的有用工艺。 The thermal decomposition of α-G_2S_3 was used to vapor-deposit a GaAs passivation film on the surface of GaAs (100). Auger electron spectroscopy depth distribution measurements show that the interface between the grown film and the substrate is clear. A complete GaS / GaAs heterojunction band structure diagram was obtained by a combination of ultraviolet photoelectron spectroscopy and low-energy electron energy loss spectroscopy, valence band offset 1.5 eV, conduction band offset 0.3 eV, 0.4 eV Band bending. The vapor deposition method is simple and practical, promising to develop into a useful process for the fabrication of GaAs devices.